Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films

被引：10

作者：

Tierno, Davide ^{[1
,2
]}

Dekkers, Matthijn ^{[3
]}

Wittendorp, Paul ^{[3
]}

Sun, Xiao ^{[1
]}

Bayer, Samuel C. ^{[4
]}

King, Seth T. ^{[4
]}

Van Elshocht, Sven ^{[1
]}

Heyns, Marc ^{[1
,2
]}

Radu, Iuliana P. ^{[1
]}

Adelmann, Christoph ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Fac Ingenieurswetenschappen, B-3001 Leuven, Belgium

[3] Solmates BV, NL-7522 NB Enschede, Netherlands

[4] Univ Wisconsin, Dept Phys, La Crosse, WI 54601 USA

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2018年 / 65卷 / 05期

关键词：

Capacitors; ferroelectric films; permittivity; piezoelectric materials; LEAD-ZIRCONATE-TITANATE; PIEZOELECTRIC PROPERTIES; DIELECTRIC-CONSTANT; DOMAIN-WALLS;

D O I：

10.1109/TUFFC.2018.2812424

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

The microwave dielectric properties of (Ba0.1Pb0.9)(Zr0.52Ti0.48)O-3 (BPZT) and ZnO thin films with thicknesses below 2 mu m were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films.

引用

页码：881 / 888

页数：8

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