Manipulation of C60 on the Si(001) surface:: Experiment and theory

被引:18
|
作者
Martsinovich, N. [1 ]
Hobbs, C.
Kantorovich, L.
Fawcett, R. H. J.
Humphry, M. J.
Keeling, D. L.
Beton, P. H.
机构
[1] Kings Coll London, Dept Phys, London WC2R 2LS, England
[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
来源
PHYSICAL REVIEW B | 2006年 / 74卷 / 08期
关键词
GENERALIZED GRADIENT APPROXIMATION; SCANNING TUNNELING MICROSCOPE; MOLECULAR MANIPULATION; AB-INITIO; ADSORPTION; FULLERENES; SI(100); STATE; DIMER; SI;
D O I
10.1103/PhysRevB.74.085304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We extend our previous discussion [D. L. Keeling , Phys. Rev. Lett. 94, 146104 (2005)] of molecular rolling on reactive surfaces. Experimental results showing long-range quasiperiodic tip responses with periods of two, three, and four lattice constants are presented. In addition, we show systematic change of the repeating wave form which we attribute to a slow variation of the tip-sample junction at an atomic level. Using ab initio simulations, we have reexamined the translation of C-60 across the surface and confirmed our proposed pivoting mechanism via which the molecule rolls by sequential breaking and forming bonds with the surface. A complex character of the molecular displacement, which is accompanied by a substantial deformation of the molecule and the surface, is revealed by careful analysis of the atomic geometry and the electron density redistribution along the path. A large variety of observed tip traces along the trough are then explained by analyzing in detail all possible transition paths between the known stable adsorption sites. Detailed models for the periodic traces with two and three lattice constants are also suggested based on a modified pivoting mechanism. In addition, we predict and discuss possible along-the-row manipulation paths.
引用
收藏
页数:12
相关论文
共 50 条
  • [41] Formation of SiC Nanostructures on Si Surface using C60 by Spinning Technique
    Mondal, Aniruddha
    Jadav, Nilesh
    Das, Utpal
    2ND NATIONAL WORKSHOP ON ADVANCED OPTOELECTRONIC MATERIALS AND DEVICES (AOMD-2008), 2008, : 28 - +
  • [42] Thermal effect in unoccupied molecular orbitals of C60 molecules adsorbed on a Si(001)-(2 x 1) surface studied by NEXAFS
    Kondo, D
    Sakamoto, K
    Takeda, H
    Matsui, F
    Ohta, T
    Amemiya, K
    Uchida, W
    Kasuya, A
    JOURNAL OF SYNCHROTRON RADIATION, 2001, 8 (02) : 505 - 507
  • [43] Reflectance difference spectroscopy: Experiment and theory for the model system Si(001):As and application to Si(001)
    Kipp, L
    Biegelsen, DK
    Northrup, JE
    Swartz, LE
    Bringans, RD
    PHYSICAL REVIEW LETTERS, 1996, 76 (15) : 2810 - 2813
  • [44] Charge transfer in the collision system He2+ + C60 +: Theory and experiment
    Bräuning H.
    Presnyakov L.P.
    Narits A.A.
    Diehl A.
    Trassl R.
    Theiß A.
    Salzborn E.
    Journal of Russian Laser Research, 2005, 26 (1) : 26 - 32
  • [45] Interaction of C60 molecules on Si(100)
    King, D. J.
    Frangou, P. C.
    Kenny, S. D.
    SURFACE SCIENCE, 2009, 603 (04) : 676 - 682
  • [46] Electronic structure and growth mode of the early stages of C60 adsorption at the Ag(001) surface
    Cepek, C
    Giovanelli, L
    Sancrotti, M
    Costantini, G
    Boragno, C
    Valbusa, U
    SURFACE SCIENCE, 2000, 454 : 766 - 770
  • [47] The interaction of C60 with Si(111) and Co/Si(111)
    Zilani, MAK
    Xu, H
    Wang, XS
    Wee, ATS
    SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 2004, 815 : 149 - 154
  • [48] Antimony cluster manipulation on the Si(001) surface by means of STM
    Kravchenko, II
    Salling, CT
    Lagally, MG
    CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, 1997, 448 : 205 - 210
  • [49] Morphology of C60 thin films grown on Ag(001)
    Giudice, E
    Magnano, E
    Rusponi, S
    Boragno, C
    Valbusa, U
    SURFACE SCIENCE, 1998, 405 (2-3) : L561 - L565
  • [50] C60 single crystal films on GaAs(001) surfaces
    Xue, QK
    Ling, Y
    Ogino, T
    Sakata, T
    Hasegawa, Y
    Hashizume, T
    Shinohara, H
    Sakurai, T
    THIN SOLID FILMS, 1996, 281 : 618 - 623