Spin-filter diode based on ZnSe/Zn1-xMnxSe/Zn1-yMnySe/ZnSe heterostructures

被引:36
|
作者
Guo, Y [1 ]
Chen, XY
Zhai, F
Gu, BL
Kawazoe, Y
机构
[1] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
关键词
D O I
10.1063/1.1485121
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose and demonstrate a spin-filter diode based on semimagnetic semiconductor ZnSe/Zn1-xMnxSe/Zn1-yMnySe/ZnSe heterostructures. It is found that the degree of spin polarization greatly depends on the electric field direction and its magnitude. There is significant difference of the spin polarization between under forward bias and under reverse bias. It is also found that the spin polarization will reverse under relatively small magnetic field, which is originated from resonant enhancement effect for spin-up electrons tunneling through effective steplike potential of the corresponding structure. (C) 2002 American Institute of Physics.
引用
收藏
页码:4591 / 4593
页数:3
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