Pressure-induced structural phase transition in the IV-VI semiconductor SnS

被引：81

作者：

Ehm, L

Knorr, K

Dera, P

Krimmel, A

Bouvier, P

Mezouar, M

机构：

[1] Univ Kiel, Inst Geowissensch Mineral Kristallog, D-24098 Kiel, Germany

[2] Carnegie Inst Washington, Geophys Lab, Washington, DC 20015 USA

[3] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

[4] ESRF, Grenoble, France

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2004年 / 16卷 / 21期

关键词：

D O I：

10.1088/0953-8984/16/21/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The structural behaviour of SnS under high-pressure has been investigated by angular dispersive synchrotron powder diffraction up to 38.5 GPa. A structural phase transition from orthorhombic alpha-SnS to monoclinic gamma-SnS was observed at 18.15 GPa. The fit of a Birch-Murnaghan equation-of-state gave the volume at zero pressure of V-0 = 192.6(3) Angstrom(3), the bulk modulus at zero pressure of B-0 = 36.6(9) GPa. and the pressure derivative of the bulk modulus B' = 5.5 (2) for alpha-SnS and V-0 = 160(1) Angstrom, B-0 = 86.0(5) GPa and B' = 4 for gamma-SnS. The improper ferro-elastic transition is of first-order and is accompanied by a large volume discontinuity of about 9.1%. The phase transition can be described in terms of a group/subgroup relationship. The doubling of the unit cell indicates a wavevector (1/2, 0, 1/2) at the U-point in the Brillouin zone.

引用

页码：3545 / 3554

页数：10

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