Neutron-induced soft errors in advanced Flash memories

被引：0

作者：

Cellere, G. ^{[1
]}

Gerardin, S. ^{[1
]}

Bagatin, M. ^{[1
]}

Paccagnella, A. ^{[1
]}

Visconti, A. ^{[2
]}

Bonanomi, M. ^{[2
]}

Beltrami, S. ^{[2
]}

Roche, P. ^{[3
]}

Gasiot, G. ^{[3
]}

Sorensen, R. Harboe ^{[4
]}

Virtanen, A. ^{[5
]}

Frost, C. ^{[6
]}

Fuochi, P. ^{[7
]}

Andreani, C. ^{[8
]}

Gorini, G. ^{[9
]}

Pietropaolo, A. ^{[9
]}

Platt, S. ^{[10
]}

机构：

[1] Univ Padua, DEI, Via Gradenigo 6-B, I-35100 Padua, Italy

[2] Numonyx, R & D Technol Dev, Agrate Brianza, Italy

[3] STMicroelect, Crolles, France

[4] European Space Agcy, European Space Res & Technol Ctr, NL-2200 AG Noordwijk, Netherlands

[5] Univ Jyvaskyla, Accelerator Lab, Jyvaskyla 40351, Finland

[6] Rutherford Appleton Lab, ISIS, Didcot, Oxon, England

[7] CNR, ISFO, Bologna, Italy

[8] Univ Roma Tor Vergata, Rome, Italy

[9] Univ Milano Bicocca, Milan, Italy

[10] Univ Cent Lancashire, Lancaster, England

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：357 / +

页数：2

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