Crystallization dynamics of nitrogen-doped Ge2Sb2Te5

被引：95
|
作者：
Shelby, Robert M. [1 ]
Raoux, Simone [1 ]
机构：
[1] IBM Corp, Almaden Res Ctr, Macronix PCRAM Joint Project, San Jose, CA 95120 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 10期
关键词：
amorphous semiconductors; antimony compounds; crystallisation; germanium compounds; nitrogen; semiconductor doping; semiconductor thin films; sputtered coatings; LASER-INDUCED CRYSTALLIZATION; OPTICAL-RECORDING MEDIA; PHASE-CHANGE MEMORY; GETE-BASED ALLOYS; THIN-FILMS; NUCLEATION; GROWTH; BEHAVIOR; OXYGEN;
D O I：
10.1063/1.3126501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The crystallization of amorphous Ge2Sb2Te5 (GST) doped with nitrogen is studied with pulsed laser heating. The crystallization time of sputter-deposited films is increased by doping by as much as 100x for nitrogen concentrations of the order of 12 at. % in as-deposited amorphous films. Suppression of the formation of critical crystal nuclei is found to be responsible. The crystallization of melt-quenched amorphous material is also slowed by doping but less dramatically.
引用
收藏
页数：6
相关论文
共 50 条
  • [21] Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application
    Yao, Dongning
    Zhou, Xilin
    Wu, Liangcai
    Song, Zhitang
    Cheng, Limin
    Rao, Feng
    Liu, Bo
    Feng, Songlin
    SOLID-STATE ELECTRONICS, 2013, 79 : 138 - 141
  • [22] Dynamics of ultrafast crystallization in As-deposited Ge2Sb2Te5 films
    Wang, QF
    Shi, LP
    Huang, SM
    Miao, XS
    Wong, KP
    Chong, TC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (7B): : 5006 - 5008
  • [23] Observation of molecular nitrogen in N-doped Ge2Sb2Te5
    Kim, Kihong
    Park, Ju-Chul
    Chung, Jae-Gwan
    Song, Se Ahn
    Jung, Min-Cherl
    Lee, Young Mi
    Shin, Hyun-Joon
    Kuh, Bongjin
    Ha, Yongho
    Noh, Jin-Seo
    APPLIED PHYSICS LETTERS, 2006, 89 (24)
  • [24] The nature of the crystallization nuclei in Ge2Sb2Te5 alloys
    Morales-Sánchez, E
    Prokhorov, E
    Vorobiev, Y
    González-Hernández, J
    SOLID STATE COMMUNICATIONS, 2002, 122 (3-4) : 185 - 188
  • [25] Phase-change characteristics of nitrogen-doped Ge2Sb2Te5 films during annealing process
    Kim, Ki-Hong
    Chung, Jae-Gwan
    Kyoung, Yong Koo
    Park, Ju-Cheol
    Choi, Sang-Jun
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 22 (01) : 52 - 55
  • [26] Phase-change characteristics of nitrogen-doped Ge2Sb2Te5 films during annealing process
    Ki-Hong Kim
    Jae-Gwan Chung
    Yong Koo Kyoung
    Ju-Cheol Park
    Sang-Jun Choi
    Journal of Materials Science: Materials in Electronics, 2011, 22 : 52 - 55
  • [27] Crystallization process in Ge2Sb2Te5 amorphous films
    Morales-Sanchez, E.
    Lain, B.
    Prokhorov, E.
    Hernandez-Landaverde, M. A.
    Trapaga, G.
    Gonzalez-Hernandez, J.
    VACUUM, 2010, 84 (07) : 877 - 881
  • [28] Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells
    Xu, Qiyun
    Lian, Enkui
    Yeoh, Phoebe
    Skowronski, Marek
    AIP ADVANCES, 2022, 12 (06)
  • [29] Study on nitrogen doped Ge2Sb2Te5 films for phase change memory
    Shin, MJ
    Kim, SM
    Choi, DJ
    Lee, KN
    Hong, SK
    Park, YJ
    JOURNAL OF MATERIALS SCIENCE, 2005, 40 (06) : 1543 - 1545
  • [30] Study on nitrogen doped Ge2Sb2Te5 films for phase change memory
    Min-Jung Shin
    Suk-Min Kim
    Doo-Jin Choi
    Kye-Nam Lee
    Suk Kyoung Hong
    Young-Jin Park
    Journal of Materials Science, 2005, 40 : 1543 - 1545
12345