Ga2O3 Films for Photoelectrochemical Hydrogen Generation

被引：24

作者：

Chang, Shoou-Jinn ^{[1
,2
]}

Wu, Ya-Ling ^{[1
,2
]}

Weng, Wen-Yin ^{[1
,2
]}

Lin, Yo-Hong ^{[1
,2
]}

Hsieh, Wei-Kang ^{[1
,2
]}

Sheu, Jinn-Kong ^{[3
]}

Hsu, Cheng-Liang ^{[4
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Dept Elect Engn, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Dept Photon, Tainan 701, Taiwan

[4] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2014年 / 161卷 / 09期

关键词：

OXIDE OHMIC CONTACTS; THIN-FILM; GAN PHOTOELECTRODES; VISIBLE-LIGHT; SOLAR-ENERGY; WATER; ELECTRODE; CELLS;

D O I：

10.1149/2.0471409jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The authors report the use of RF sputtered Ga2O3 films prepared on SiO2/Si template to serve as the photoelectrode for photoelectrochemical (PEC) water splitting. It was found that photocurrent observed from the 900 degrees C-annealed Ga2O3 film was more than 3 orders of magnitude larger than its dark current at zero bias voltage. It was also found that no decomposition and/or corrosion occurred on the surface of the 900 degrees C-annealed Ga2O3 film. This suggests that Ga2O3 film has the potential to serve as a reliable photocathode for hydrogen generation. (C) 2014 The Electrochemical Society. All rights reserved.

引用

页码：H508 / H511

页数：4

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