Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

被引：30

作者：

Cheng, Lin ^{[1
]}

Palmour, John W. ^{[1
]}

Agarwal, Anant K. ^{[2
]}

Allen, Scott T. ^{[1
]}

Brunt, Edward V. ^{[1
]}

Wang, Gangyao ^{[1
]}

Pala, Vipindas ^{[1
]}

Sung, Woongje ^{[3
]}

Huang, Alex Q. ^{[3
]}

O'Loughlin, Michael ^{[1
]}

Burk, Albert ^{[1
]}

Grider, Dave ^{[1
]}

Scozzie, Charles ^{[4
]}

机构：

[1] Cree Inc, 4600 Silicon Dr, Durham, NC 27703 USA

[2] Dept Energy, Washington, DC USA

[3] North Carolina State Univ, Future Renewable Elect Energy Delivery & Manageme, Durham, NC USA

[4] US Army, Res Lab, Adelphi, MD USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

Silicon Carbide; High Voltage; MOSFET; GTO; IGBT; Power Diode; Medium-Voltage Drive; Variable Speed Drive; renewable energy conversion; power grid; pulsed power; 1 CM(2); KV;

D O I：

10.4028/www.scientific.net/MSF.778-780.1089

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Advanced high-voltage (>= 10 kV) silicon carbide (SiC) devices described in this paper have the potential to significantly impact the system size, weight, high-temperature reliability, and cost of modern variable-speed medium-voltage (MV) systems such as variable speed (VSD) drives for electric motors, integration of renewable energy including energy storage, micro-grids, and compact pulsed power systems. In this paper, we review the current status of the development of 10 kV - 20 kV class power devices in SiC, including MOSFETs, JBS diodes, IGBTs, GTO thyristors, and PiN diodes at Cree. Advantages and weakness of each device are discussed and compared. A strategy for high-voltage SiC power device development is proposed.

引用

页码：1089 / +

页数：2

共 50 条

[31] THE DEVELOPMENT OF HIGH-VOLTAGE POWER CAPACITOR TECHNOLOGY IN JAPAN
YOSHIDA, Y
MURAOKA, T
IEEE ELECTRICAL INSULATION MAGAZINE, 1995, 11 (01) : 32 - 45
[32] Development of 6kV-class SiC-PiN diodes for high-voltage power inverter
Tanaka, Yasunori
Ohashi, Hiromichi
Takao, Kazuto
Sung, KyungMin
Wada, Keiji
Kanai, Takeo
2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2010, : 213 - 216
[33] Session 33 Overview: High-Voltage, GaN and Wireless Power Power Management Subcommittee
Chen, Min
Wicht, Bernhard
Miyaji, Kousuke
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2021, 64 : 458 - 459
[34] HIGH-POWER PULSED EVALUATION OF HIGH-VOLTAGE SiC N-GTO
Ogunniyi, Aderinto
O'Brien, Heather
Ryu, Sei-Hyung
Richmond, Jim
2019 IEEE 7TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA 2019), 2019, : 425 - 429
[35] Inductive Wireless Power Transmission Device Design for High-Voltage Systems
Zhang, Hanwen
Cui, Zhe
Du, Yuwei
Wang, Zhenxing
Sun, Liqiong
2024 IEEE INTERNATIONAL CONFERENCE ON HIGH VOLTAGE ENGINEERING AND APPLICATIONS, ICHVE 2024, 2024,
[36] Optimization Design of an Inductive Energy Harvesting Device for Wireless Power Supply System Overhead High-Voltage Power Lines
Wang, Wei
Huang, Xueliang
Tan, Linlin
Guo, Jinpeng
Liu, Han
ENERGIES, 2016, 9 (04):
[37] Research of Three-phase High-voltage Energy Metering Device
Yan Xin
Chen Mingshuai
Li Xinyang
Zhang Hongwei
Sui Zongqiang
Li Liwei
2017 CHINESE AUTOMATION CONGRESS (CAC), 2017, : 5845 - 5848
[38] Evaluation on Dynamic Switching Noise and Power Loss in High-voltage SiC IGBT
Liu, Hangzhi
Yin, Xin
Deng, Wenjuan
Liang, Shiwei
Fang, Fang
Wang, Jun
PROCEEDINGS OF 2019 IEEE 3RD INTERNATIONAL ELECTRICAL AND ENERGY CONFERENCE (CIEEC), 2019, : 818 - 822
[39] A Simple and Accurate Circuit Simulation Model for High-Voltage SiC Power MOSFETs
Arribas, A. Pozo
Krishnamurthy, M.
Shenai, K.
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 4, 2014, 64 (07): : 99 - 110
[40] High-Voltage Full-SiC Power Module: Device Fabrication, Testing and High Frequency Application in kW-level Converter
Chen, Sizhe
He, Junwei
Sheng, Kuang
2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2015, : 253 - 256

← 1 2 3 4 5 →