Electron dynamics of the buffer layer and bilayer graphene on SiC

被引:6
|
作者
Shearer, Alex J. [1 ,2 ]
Johns, James E. [3 ]
Caplins, Benjamin W. [1 ,2 ]
Suich, David E. [1 ,2 ]
Hersam, Mark C. [4 ,5 ]
Harris, Charles B. [1 ,2 ]
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Chem Sci, Berkeley, CA 94720 USA
[3] Univ Minnesota Twin Cities, Dept Chem, Minneapolis, MN 55455 USA
[4] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[5] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
关键词
GRAPHITE; GAS; FEMTOSECOND; STATES;
D O I
10.1063/1.4882236
中图分类号
O59 [应用物理学];
学科分类号
摘要
Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n = 2, and n = 3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n = 2 the n = 3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons. (C) 2014 AIP Publishing LLC.
引用
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页数:5
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