Pressure effect on the mechanical and electronic properties of B3N3: A first-principle study

被引:1
|
作者
Bagheri, Mohammad [1 ]
Faez, Rahim [2 ]
机构
[1] Islamic Azad Univ, Dept Elect Biomed & Mechatron Engn, Qazvin Branch, Qazvin, Iran
[2] Sharif Univ Technol, Dept Elect Engn, Azadi Ave, Tehran, Iran
关键词
Tetragonal B3N3; Pressure; Phonon-mediated superconductivity; Mechanical properties; Electronic properties; BORON-NITRIDE; SUPERCONDUCTIVITY; GRAPHENE;
D O I
10.1016/j.physc.2018.02.004
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we perform Self-Consistent Field (SCF) energy calculation of Tetragonal B3N3 in the homogenous pressure range of -30 GPa to +160 GPa. Also, we study mechanical and electronic properties of this compound as a potential candidate for a conventional phonon-mediated superconductor with a high transition temperature. To do this, the volume changes of B3N3, and its bulk modulus, due to applying pressure in the range of -30 GPa to +160 GPa are calculated and analyzed. The calculated Bulk modulus of B3N3 at 230 GPa in the relaxed condition indicates the strength of bonds and its low compressibility. We calculated and analyzed the electronic effective mass in both XM and MA directions and anisotropy parameter in these two directions in the relaxed condition and under pressure in the range of -30 GPa to +160 GPa. It is shown that in overall, the direction in which the transport of electrons is parallel to the two perpendicular honeycomb planes has less effective mass and better conductivity than the other direction, in which the electronic transport is perpendicular to at least one of the hexagonal structure planes. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:50 / 54
页数:5
相关论文
共 50 条
  • [21] The first-principle study of mechanical, optoelectronic and thermoelectric properties of CsGeBr3 and CsSnBr3 perovskites
    Mahmood, Q.
    Yaseen, M.
    Hassan, M.
    Rashid, M. S.
    Tlili, Iskander
    Laref, A.
    MATERIALS RESEARCH EXPRESS, 2019, 6 (04):
  • [22] First-principle calculations of the cohesive energy and the electronic properties of PbTiO3
    Hosseini, S. M.
    Movlarooy, T.
    Kompany, A.
    PHYSICA B-CONDENSED MATTER, 2007, 391 (02) : 316 - 321
  • [23] First-Principle Study of the Structural, Electronic, and Thermodynamic Properties of Cuprous Oxide under Pressure
    Zemzemi, M.
    Elghoul, N.
    Khirouni, K.
    Alaya, S.
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2014, 118 (02) : 235 - 241
  • [24] First-principle study of the structural, electronic, and thermodynamic properties of cuprous oxide under pressure
    M. Zemzemi
    N. Elghoul
    K. Khirouni
    S. Alaya
    Journal of Experimental and Theoretical Physics, 2014, 118 : 235 - 241
  • [25] Effect of surface passivation on the electronic properties of GaAs nanowire: A first-principle study
    Zhang Yong
    Shi Yi-Min
    Bao You-Zhen
    Yu Xia
    Xie Zhong-Xiang
    Ning Feng
    ACTA PHYSICA SINICA, 2017, 66 (19)
  • [26] A first-principle calculation of structural, mechanical and electronic properties of titanium borides
    Yan Hai-yan
    Wei Qun
    Chang Shao-mei
    Guo Ping
    TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2011, 21 (07) : 1627 - 1633
  • [27] First-principle calculations of structural, electronic and optical properties of BaTiO3 and BaZrO3 under hydrostatic pressure
    Khenata, R
    Sahnoun, M
    Baltache, H
    Rérat, M
    Rashek, AH
    Illes, N
    Bouhafs, B
    SOLID STATE COMMUNICATIONS, 2005, 136 (02) : 120 - 125
  • [28] First-principle study on electronic and structural properties of newly discovered superconductors: CaIrSi3 and CaPtSi3
    Kaczkowski, J.
    Jezierski, A.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (21) : 6142 - 6145
  • [29] First-principle study on electronic structure of BaTiO3(001) surfaces
    Ni Jian-Gang
    Liu Nuo
    Yang Guo-Lai
    Zhang Xi
    ACTA PHYSICA SINICA, 2008, 57 (07) : 4434 - 4440
  • [30] Theoretical investigation of magnetic, electronic and optical properties of orthorhombic YFeO3: A first-principle study
    Shen, T.
    Hu, C.
    Yang, W. L.
    Liu, H. C.
    Wei, X. L.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 34 : 114 - 120