Dark current and signal-to-noise ratio in BDJ image sensors

被引：5
|
作者：
Feruglio, Sylvain [1 ]
Hanna, Victor Fouad [1 ]
Alquie, Georges [1 ]
Vasilescu, Gabriel [1 ]
机构：
[1] Univ Paris 06, Inst Instruments & Syst Ile France, F-94200 Ivry, France
来源：
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2006年 / 55卷 / 06期
关键词：
active pixel sensor (APS); buried double junction (BDJ); CMOS; dark current; noise; photodetector; signal-to-noise ratio (SNR);
D O I：
10.1109/TIM.2006.884291
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, analytical expressions of dark currents and equivalent noise generators of a CMOS color image sensor are presented, and the signal-to-noise ratio (SNR) at both outputs is evaluated. Static measurements and simulations on Austria Micro Systems 0.35-mu m CMOS test structures yield guidelines to increase the SNR of the buried double-junction photodetector.
引用
收藏
页码：1892 / 1903
页数：12
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