Dark current and signal-to-noise ratio in BDJ image sensors

被引：5

作者：

Feruglio, Sylvain ^{[1
]}

Hanna, Victor Fouad ^{[1
]}

Alquie, Georges ^{[1
]}

Vasilescu, Gabriel ^{[1
]}

机构：

[1] Univ Paris 06, Inst Instruments & Syst Ile France, F-94200 Ivry, France

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2006年 / 55卷 / 06期

关键词：

active pixel sensor (APS); buried double junction (BDJ); CMOS; dark current; noise; photodetector; signal-to-noise ratio (SNR);

D O I：

10.1109/TIM.2006.884291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, analytical expressions of dark currents and equivalent noise generators of a CMOS color image sensor are presented, and the signal-to-noise ratio (SNR) at both outputs is evaluated. Static measurements and simulations on Austria Micro Systems 0.35-mu m CMOS test structures yield guidelines to increase the SNR of the buried double-junction photodetector.

引用

页码：1892 / 1903

页数：12

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