Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si

被引：27
|
作者：
Peng, C. -Y.
Yuan, F.
Yu, C. -Y.
Kuo, P. -S.
Lee, M. H.
Maikap, S.
Hsu, C. -H.
Liu, C. W. [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan
[3] Natl Nano Device Labs, Hsinchu 30076, Taiwan
[4] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei 106, Taiwan
[5] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan
[6] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 01期
关键词：
D O I：
10.1063/1.2400394
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The ultrathin strained Si0.2Ge0.8 quantum well channel (similar to 5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2Ge0.8 channel reveals an similar to 3.2 times hole current enhancement and an similar to 3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2Ge0.8 channel.
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页数：3
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