Intersubband transitions in proton irradiated In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on semi-insulating InP substrate

被引：6

作者：

Zhou, QY ^{[1
]}

Manasreh, MO

Weaver, BD

Missous, M

机构：

[1] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] UMIST, Dept Elect Engn & Elect, Manchester M60 1QD, Lancs, England

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 18期

关键词：

D O I：

10.1063/1.1519726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells (MQWs) were investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. It is observed that proton doses as high as 1 x 10(14) cm(-2) do not have a measurable effect on the intensity or the peak position energy of the intersubband transitions. While a dose of 1 x 10(14) cm(-2) has shown a detrimental effect on the intersubband transitions in the GaAs/AlGaAs MQWs, the intersubband transitions in InGaAs/InAlAs MQWs withstood proton doses as high as 1 x 10(15) cm(-2) and completely depleted after irradiation with a dose of 3 x 10(15) cm(-2). Furnace thermal annealing of the heavily irradiated samples shows that the depleted intersubband transitions in InGaAs/InAlAs MQW samples were almost completely recovered. (C) 2002 American Institute of Physics.

引用

页码：3374 / 3376

页数：3

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