As-grown iron precipitates and gettering in multicrystalline silicon

被引：16

作者：

Haarahiltunen, A. ^{[1
]}

Savin, H. ^{[1
]}

Yli-Koski, M. ^{[1
]}

Talvitie, H. ^{[1
]}

Asghar, M. I. ^{[1
]}

Sinkkonen, J. ^{[1
]}

机构：

[1] Helsinki Univ Technol, FI-02015 Helsinki, Finland

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2009年 / 159-60卷

基金：

芬兰科学院;

关键词：

Multicrystalline silicon; Iron; Precipitation; Gettering; IMPURITIES;

D O I：

10.1016/j.mseb.2008.10.053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report here the results of a theoretical study concerning the iron precipitation in multicrystalline silicon during crystal growth and its implications on phosphorus gettering. In our model the average size and density of iron precipitates in the final structure depends on the growth method, initial iron concentration and the density of possible heterogeneous precipitation sites. With the same model we can simulate phosphorus diffusion gettering (PDG) of iron in cast multicrystalline silicon by using the iron precipitate size distribution obtained from crystal growth simulations as initial condition for gettering. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：248 / 252

页数：5

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