Hall effect in Permalloy-based thin films and magnetic multilayers

被引:5
|
作者
Volmer, M
Neamtu, J
机构
[1] Transilvania Univ, Dept Phys, Brasov 500036, Romania
[2] Adv Res Inst Elect Engn, Bucharest 030138, Romania
关键词
Hall effect; anisotropic magnetoresistance; magnetic films;
D O I
10.1016/j.jmmm.2003.12.360
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Correlation between the Hall effect and magnetization enables the use of this technique for the study of magnetic properties in Permalloy (Py) thin films and Py/NM/Py multilayers. NM denotes Cu and Al2O3 layers. The measured voltages present hysteresis loops at low-magnetic field. The saturation fields obtained when the magnetic field is applied normal to the film plane are less than the values predicted from the shape anisotropy known for flat surfaces, but are consistent with the film surfaces topography. (C) 2003 Elsevier B.V. All rights reserved.
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页码:1881 / 1882
页数:2
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