High-performance poly-Si thin film transistors with highly biaxially oriented poly-Si thin films using double line beam continuous-wave laser lateral crystallization

被引：26
|
作者：
Yamano, Masayuki [1 ]
Kuroki, Shin-ichiro [1 ]
Sato, Tadashi [1 ]
Kotani, Koji [2 ]
机构：
[1] Hiroshima Univ, Res Inst Nanodevice & Bio Syst RNBS, Higashihiroshima, Hiroshima 7398527, Japan
[2] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 03期
关键词：
GRAINS; FABRICATION; GROWTH; TFTS; SEED;
D O I：
10.7567/JJAP.53.03CC02
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly biaxially oriented poly-Si thin films were formed by double-line beam continuous-wave laser lateral crystallization (DLB-CLC). The crystallinities of the DLB-CLC poly-Si thin films were (110), (111), and (211) for the laser scan, transverse, and surface directions, respectively, and an energetically stable Sigma 3 grain boundary was observed to be dominant. All silicon grains were elongated in the laser scan direction and one-dimensionally very large silicon grains with lengths of more than 100 mu m were fabricated. Using these biaxially oriented polycrystalline silicon (polySi) films, low-temperature poly-Si TFTs (LTPS-TFTs) were fabricated at low temperatures (3 550 degrees C) by a metal gate self-aligned process. As a result, a TFT with a high electron field effect mobility of mu(FE) = 450cm(2)V(-1) s(-1) in a linear region was realized. (c) 2014 The Japan Society of Applied Physics
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页数：4
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