2D semiconducting α-In2Se3 single crystals: Growth and huge anisotropy during transport

Using the temperature gradient method, alpha-In2Se3 single crystals were successfully grown. Samples prepared using this method exhibited good crystallinity and huge anisotropic properties with regard to both their electrical resistivity and Seebeck coefficient. The in-plane vs. out-of-plane electrical resistivity anisotropic-ratio was approximately 490,000 at 20 K, 43,300 at 300 K, and 3650 at 400 K. The in-plane and out-of-plane Seebeck coefficient values were 252 mu V K-1 and 397 mu V K-1 at 400 K, respectively. This huge anisotropy was primarily due to the anisotropic activation energy and anisotropic mobility. (C) 2019 Published by Elsevier B.V.