Step-flow growth of Al droplet free AlN epilayers grown by plasma assisted molecular beam epitaxy

被引：7

作者：

Shao, Pengfei ^{[1
]}

Li, Siqi ^{[1
]}

Li, Zhenhua ^{[1
,2
]}

Zhou, Hui ^{[1
]}

Zhang, Dongqi ^{[1
]}

Tao, Tao ^{[1
]}

Yan, Yu ^{[1
]}

Xie, Zili ^{[1
]}

Wang, Ke ^{[1
,3
]}

Chen, Dunjun ^{[1
]}

Liu, Bin ^{[1
]}

Zheng, Youdou ^{[1
]}

Zhang, Rong ^{[1
,4
]}

Lin, Tsungtse ^{[3
]}

Wang, Li ^{[3
]}

Hirayama, Hideki ^{[3
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing, Peoples R China

[2] Zaozhuang Univ, Coll Optoelect Engn, Zaozhuang 277160, Peoples R China

[3] RIKEN, Saitama, Japan

[4] Xiamen Univ, Xiamen, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2022年 / 55卷 / 36期

基金：

国家重点研发计划;

关键词：

AlN; Al modulation epitaxy; Al droplet free; step flow; THIN-FILMS; SURFACE-MORPHOLOGY; GAN; BUFFER; LAYER;

D O I：

10.1088/1361-6463/ac79dd

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated an Al modulation epitaxy (AME) method to obtain step-flow growth of Al droplet free AlN layers by plasma assisted molecular beam epitaxy (MBE). At the usual growth temperature of (Al)GaN/AlN heterostructures, Al atom migration and desorption rate are very low and consequently it is very difficult to avoid the formation of Al droplets on AlN growth front by conventional MBE growth method. By adopting the AME growth method, such a difficulty has been effectively overcome and step flow growth mode of AlN has been clearly observed. By optimizing the AME growth time sequence, namely, AlN growth time and N radical beam treatment time, Al droplet free AlN layers with step flow growth characteristics have been obtained, with atomic flat surfaces and an average atomic step width of similar to 118 nm at 970 degrees C-1000 degrees C, which is still suitable to grow (Al)GaN/AlN heterostructures by MBE.

引用

页数：8

共 50 条

[21] RHEED monitoring of AlN epitaxial growth by plasma-assisted molecular beam epitaxy
Ferro, G
Okumura, H
Ide, T
Yoshida, S
JOURNAL OF CRYSTAL GROWTH, 2000, 210 (04) : 429 - 434
[22] Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy
Laleyan, David Arto
Fernandez-Delgado, Natalia
Reid, Eric T.
Wang, Ping
Pandey, Ayush
Botton, Gianluigi A.
Mi, Zetian
APPLIED PHYSICS LETTERS, 2020, 116 (15)
[23] Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy
Ren Fan
Hao Zhi-Biao
Hu Jian-Nan
Zhang Chen
Luo Yi
CHINESE PHYSICS B, 2010, 19 (11)
[24] Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy
任凡
郝智彪
胡健楠
张辰
罗毅
Chinese Physics B, 2010, 19 (11) : 520 - 524
[25] On the morphology of films grown by droplet-assisted molecular beam epitaxy
Lamas, TE
Quivy, AA
BRAZILIAN JOURNAL OF PHYSICS, 2002, 32 (02) : 399 - 401
[26] Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy
Nemoz, M.
Semond, F.
Rennesson, S.
Leroux, M.
Bouchoule, S.
Patriarche, G.
Zuniga-Perez, J.
SUPERLATTICES AND MICROSTRUCTURES, 2021, 150
[27] Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy
Hermann, M
Furtmayr, F
Bergmaier, A
Dollinger, G
Stutzmann, M
Eickhoff, M
APPLIED PHYSICS LETTERS, 2005, 86 (19) : 1 - 3
[28] The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy
Wong, Yuen-Yee
Chang, Edward Yi
Yang, Tsung-Hsi
Chang, Jet-Rung
Chen, Yi-Cheng
Ku, Jui-Tai
Lee, Ching-Ting
Chang, Chun-Wei
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (06) : 1487 - 1492
[29] Optical spectroscopy of a-plane-oriented ZnO epilayers grown by plasma-assisted molecular beam epitaxy
Lo, B.
Gaye, M. B.
Dioum, A.
Mohrain, C. M.
Tall, M. S.
Chauveau, J. M.
Tesseire, M. Doninelli
Ndiaye, S.
Beye, A. C.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 115 (01): : 257 - 261
[30] Raman scattering study of cubic GaN and GaMnN epilayers grown by plasma- assisted molecular beam epitaxy
Alarcon-Llado, E.
Ibanez, J.
Cusco, R.
Artus, L.
Novikov, S. V.
Foxon, C. T.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (11)

← 1 2 3 4 5 →