Mobility-and temperature-dependent device model for amorphous In-Ga-Zn-O thin-film transistors

被引：38
|
作者：
Abe, Katsumi [1 ,2 ]
Sato, Ayumu [1 ]
Takahashi, Kenji [1 ]
Kumomi, Hideya [1 ,3 ]
Kamiya, Toshio [2 ,3 ]
Hosono, Hideo [2 ,3 ,4 ]
机构：
[1] Canon Inc, Ohta Ku, Tokyo 1468501, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[3] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[4] Tokyo Inst Technol, Frontier Res Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
THIN SOLID FILMS | 2014年 / 559卷
关键词：
Amorphous In-Ga-Zn-O (a-IGZO); Thin-film transistor (TFT); Device model; Temperature dependence; FIELD-EFFECT-TRANSISTORS;
D O I：
10.1016/j.tsf.2013.11.066
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A device model for amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) that explains temperature dependence is proposed. It incorporates a carrier-density dependent mobility and a density of subgap traps of a-IGZO. The model parameters were extracted from only one transfer curve of an a-IGZO TFT at a low drain voltage through a simple analytical model. Device simulation based on this model reproduced current-and mobility-gate voltage characteristics of the a-IGZO TFT well over a wide range of bias voltage and temperature (253-393 K). (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：40 / 43
页数：4
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