Electrical conductivity improvement by iodine doping for diamond-like carbon thin-films deposited by microwave surface wave plasma CVD

被引:32
|
作者
Omer, Ashraf M. M.
Adhikari, Sudip
Adhikary, Sunil
Rusop, Mohamad
Uchida, Hideo
Soga, Tetsuo
Umeno, Masayoshi
机构
[1] Chubu Univ, Dept Elect & Elect Engn, Kasugai, Aichi 4878501, Japan
[2] Chubu Univ, Dept Elect & Informat Engn, Kasugai, Aichi 4878501, Japan
[3] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan
关键词
diamond-like carbon; iodine doping; microwave surface wave plasma CVD; optical properties; electrical conductivity;
D O I
10.1016/j.diamond.2005.11.045
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the effects of iodine (1) doping on the optical and structural properties, and electrical conductivity of diamond-like carbon (DLC) thin-films grown on silicon, glass and quartz substrates by microwave surface wave plasma chemical vapor deposition at low temperature (< 100 degrees C). For film deposition, we used argon and methane as plasma source gases. The films were characterized by UV/VIS/NIR spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy and current-voltage (I-V) characteristics. The optical band gap of the films decreased from 3.5 to 1.9 eV corresponding to non-doping to I-doping conditions. The XPS results confirm the successful doping of I in the films. The FTIR result shows the effect of I-doping on reduction of sp(3)-bonded carbon in the film. The I-V measurement shows I-doping induced electrical conductivity of the DLC film. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:645 / 648
页数:4
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