Feasibility of a semiconductor superlattice oscillator based on quenched domains for the generation of submillimeter waves

被引:28
|
作者
Scheuerer, R [1 ]
Schomburg, E
Renk, KF
Wacker, A
Schöll, E
机构
[1] Univ Regensburg, Inst Angew Phys, D-93040 Regensburg, Germany
[2] Tech Univ Berlin, Inst Theoret Phys, D-10623 Berlin, Germany
关键词
Quenching - Submillimeter waves - Terahertz waves;
D O I
10.1063/1.1500770
中图分类号
O59 [应用物理学];
学科分类号
摘要
We discuss the feasibility of a semiconductor superlattice oscillator which exploits the quenching of propagating dipole domains for the generation of submillimeter waves. We studied the dynamics of electrons in a semiconductor superlattice by performing a simulation based on a drift-diffusion model, taking into account feedback from a resonant circuit. The simulation delivers propagating dipole domains which are quenched before they reach the anode. The periodic formation and quenching of domains creates a self-sustained oscillation of the current through the superlattice. The frequency of the oscillation can be more than three times higher than without feedback. We suggest that with already existing superlattices an oscillator working in the quenched domain mode can be realized up to almost 500 GHz. (C) 2002 American Institute of Physics.
引用
收藏
页码:1515 / 1517
页数:3
相关论文
共 35 条
  • [31] Singly resonant optical parametric oscillator based on adhesive-free-bonded periodically inverted KTiOPO4 plates: terahertz generation by mixing a pair of idler waves
    Zhao, Pu
    Ragam, Srinivasa
    Ding, Yujie J.
    Zotova, Ioulia B.
    Mu, Xiaodong
    Lee, Huai-Chuan
    Meissner, Stephanie K.
    Meissner, Helmuth
    OPTICS LETTERS, 2012, 37 (07) : 1283 - 1285
  • [32] Weight Update Generation Circuit Utilizing Phase Noise of Integrated Complementary Metal-Oxide-Semiconductor Ring Oscillator for Memristor Crossbar Array Neural Network-Based Stochastic Learning
    Bae, Woorham
    Yoon, Kyung Jean
    ADVANCED INTELLIGENT SYSTEMS, 2020, 2 (05)
  • [33] Generation of 356W peak power from all-semiconductor master oscillator power amplifier (MOPA) system based on eXtreme chirped pulse amplification (X-CPA) concept
    Kim, K
    Lee, S
    Delfyett, PJ
    2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3, 2005, : 1721 - 1723
  • [34] 1.4kW high peak power generation from an all semiconductor mode-locked master oscillator power amplifier system based on eXtreme Chirped Pulse Amplification(X-CPA)
    Kim, K
    Lee, S
    Delfyett, PJ
    OPTICS EXPRESS, 2005, 13 (12): : 4600 - 4606
  • [35] Generation of sub-100 ps pulses with a peak power of 65 W by gain switching, pulse shortening, and pulse amplification using a semiconductor-based master oscillator-power amplifier system
    Schwertfeger, Sven
    Klehr, Andreas
    Hoffmann, Thomas
    Liero, Armin
    Wenzel, Hans
    Erbert, Goetz
    APPLIED OPTICS, 2013, 52 (14) : 3364 - 3367