Study of adsorption of Al atom on Si(111)7x7 surface

被引：9
|
作者：
Uchida, H [1 ]
Kuroda, T [1 ]
Mohamad, FB [1 ]
Kim, J [1 ]
Nishimura, K [1 ]
Inoue, M [1 ]
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan
来源：
SURFACE SCIENCE | 2004年 / 566卷
关键词：
silicon; aluminum; adatoms; adsorption kinetics; diffusion and migration; scanning tunneling microscopy; ab initio quantum chemical methods and calculations;
D O I：
10.1016/j.susc.2004.06.107
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We investigated adsorption of an Al atom on the Si(1 1 1)7 x 7 surface by using a scanning tunneling microscope. The evaporated Al atom displaced a Si center adatom of the surface; the expelled Si atom diffused inside a half unit cell of the Si(1 1 1)7 x 7 surface. The adsorbed single Al atom, which shows bias voltage dependency, hopped among three center adatom sites inside the half unit cell. Ab initio molecular orbital method was used to investigate the adsorption of Al atom on the surface. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：197 / 202
页数：6
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