A CMOS built-in current sensor for IDDQ testing

被引：2

作者：

Kim, Jeong Beom ^{[1
]}

Hong, Seung Ho ^{[1
]}

机构：

[1] Kangweon Natl Univ, Dept Elect Engn, Chunchon 200701, Kangwon, South Korea

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2006年 / E89C卷 / 06期

关键词：

IDDQ testing; current testing; BICS; reliability;

D O I：

10.1093/ietele/e89-c.6.868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new built-in current sensor (BICS) that detects defects using the current testing technique in CMOS integrated circuits. The proposed circuit is a negligible impact on the performance of the circuit under test (CUT). In addition, no extra power dissipation and high-speed fault detection are achieved. It can be applicable in deep sub-micron process. The area overhead of the BICS versus the entire chip is about 9.2%. The chip was fabricated with Hynix 0.35 mu m standard CMOS technology.

引用

页码：868 / 870

页数：3

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