Study of fusion bonding of diamond to silicon for silicon-on-diamond technology

被引：26
|
作者：
Yushin, GN
Wolter, SD
Kvit, AV
Collazo, R
Stoner, BR
Prater, JT
Sitar, Z
机构：
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[2] MCNC, Mat & Elect Technol Div, Res Triangle Pk, NC 27709 USA
[3] USA, Res Off, Res Triangle Pk, NC 27709 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 17期
关键词：
D O I：
10.1063/1.1516636
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Diamond films grown on silicon were polished to a root-mean-square roughness of 15 nm and bonded to (100) silicon in a dedicated ultrahigh vacuum bonding chamber. Successful bonding was observed at temperatures as low as 950 degreesC under a uniaxial mechanical stress of 32 MPa. Scanning acoustic microscopy indicated complete bonding at fusion temperatures above 1150 degreesC, and some cracking of the diamond film. Cross section transmission electron microscopy of the same specimens revealed an intermediate layer consisting of silicon, carbon, and oxygen. This layer was approximately 30 nm thick and had an amorphous structure. (C) 2002 American Institute of Physics.
引用
收藏
页码：3275 / 3277
页数：3
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