Analysis of forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky barriers

被引：6
|
作者：
Ivanov, P. A. [1 ]
Potapov, A. S. [1 ]
Samsonova, T. P. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2009年 / 43卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
ELECTRICAL CHARACTERISTICS; DIODES; INHOMOGENEITIES; CONTACTS;
D O I：
10.1134/S1063782609020122
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky contacts with an ideality factor n = 1.1-1.2 in the exponential portion of the characteristics have been analyzed. The nonideality was considered to be a result of the formation of a thin dielectric layer between the deposited titanium layer and 4H-SiC. The following electrical parameters of the contacts were determined from experimental current-voltage characteristics: energy barrier height, thickness of the intermediate dielectric layer, and energy distribution of the density of states at the insulator-semiconductor interface.
引用
收藏
页码：185 / 188
页数：4
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