Thickness dependence of optical properties of amorphous indium oxide thin films deposited by reactive evaporation

被引：12
|
作者：
Ulutas, K. [1 ]
Deger, D.
Skarlatos, Y.
机构：
[1] Istanbul Univ, Dept Phys, TR-34118 Istanbul, Turkey
[2] Bogazici Univ, Dept Phys, TR-80815 Istanbul, Turkey
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 10期
关键词：
D O I：
10.1002/pssa.200521321
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical conductivity and absorption coefficient of amorphous indium oxide thin films, thermally evaporated on glass substrates at room temperature, were evaluated. For direct transitions the variation of the optical band gap with thickness was determined and this variation was supposed to appear due to the variation of localized gap states, whereas the variation of conductivity with thickness was supposed to be due to the variation of carrier concentration. We attribute the variation of absorption coefficient with thickness to the variation of optical band gap energy rather than optical interference. (c) 2006 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2432 / 2437
页数：6
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