Photoinduced heterostructure in a vanadium dioxide film

被引：1
|
作者：
Semenov, A. L. [1 ]
机构：
[1] Ulyanovsk State Univ, Ulyanovsk 432017, Russia
来源：
PHYSICS OF THE SOLID STATE | 2017年 / 59卷 / 02期
关键词：
PHASE-TRANSITION;
D O I：
10.1134/S1063783417020251
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A photoinduced semiconductor-metal phase transition that occurs in a surface layer of vanadium dioxide film on an aluminum substrate within the time Delta t < 1 ps has been studied theoretically. A nonthermal mechanism of the development of instability has been considered. It has been shown that a heterophase structure containing metallic and semiconductor layers is formed in the VO2 film. The phase transition time tau has been calculated as a function of the distance z from the film surface. Comparison with the experiment has been carried out.
引用
收藏
页码：351 / 354
页数：4
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