Single-mode operation of optically pumped membrane buried heterostructure distributed-feedback lasers

1.5 mum-wavelength GaInAsP/InP membrane buried heterostructure distributed-feedback laser consisting of deeply, etched single-quantum-well wire-like active regions was realized using low damage CH4/H-2 reactive ion etching and embedding growth by the organo-metallic vapor phase epitaxy technique. A threshold pump power of 40 mW and a sub-mode suppression-ratio of 36 dB were obtained for a 142 nm-thick semiconductor membrane core layer with a cavity length of 120 mum and a stripe width of 2 mum under room-temperature continuous wave optical pumping by a 970 nm wavelength laser diode.