Fabrication processes for low threshold InGaAs vertical-cavity surface-emitting lasers

被引：1
|
作者：
Mukaihara, T
Hatori, N
Ohnoki, N
Mizutani, A
Abe, M
Matsutani, A
Koyama, F
Iga, K
机构：
[1] Tokyo Institute of Technology, Prec. and Intelligence Laboratory, Yokohama 226, 4259 Nagatsuta, Midoriku
来源：
PHYSICA B | 1996年 / 227卷 / 1-4期
关键词：
InGaAs; lasers; fabrication processes;
D O I：
10.1016/0921-4526(96)00453-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In order to realize a low threshold vertical-cavity surface-emitting laser (VCSEL), we have fabricated a micro-cavity structure by a native oxidation technique. The strong optical and electrical confinements enabled to achieve low thresholds. For further threshold reduction, we have demonstrated an n-type modulation doped quantum well (QW) laser and a 30% reduction of threshold in n-type doped QW laser compared with undoped QW lasers is observed. These are the first experiments for InGaAs/AlGaAs materials.
引用
收藏
页码：400 / 403
页数：4
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