Transmission electron microscopy of micro- and nanostructures in semiconductors

被引：0
|
作者：
Cullis, AG
机构：
[1] Dept. of Electron. and Elec. Eng., University of Sheffield, Sheffield S1 3JD, Mappin Street
来源：
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 1996年 / 354卷 / 1719期
关键词：
D O I：
10.1098/rsta.1996.0120
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Semiconducting materials science and technology are extremely active areas of research because they underpin advanced electronic device fabrication. Electron microscopy studies of the materials play a vital role in the work, since they provide uniquely detailed structural and chemical information on all important length scales. The present article reviews applications of, primarily, transmission electron microscopy in critical areas ranging from epitaxial growth through to final device analysis. The examples provided demonstrate the comprehensive assessment of materials structure and composition which can be achieved.
引用
收藏
页码：2635 / 2651
页数：17
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