Conduction mechanism for sputtered a-C:H based structures

被引：4
|
作者：
Lazar, I. [1 ]
Lazar, G. [1 ]
机构：
[1] Bacau Univ, Bacau 600115, Romania
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 21-22期
关键词：
electrical and electronic properties;
D O I：
10.1016/j.jnoncrysol.2006.02.044
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures fabricated by magnetron sputtering deposition of insulating hydrogenated amorphous carbon are analyzed by measuring their current-voltage characteristics in order to find the conduction mechanism. For MIM structures, the linearity of the logarithmic dependencies between current density and electric field intensity (log J-Iog E) for higher fields indicate a space charge limited current (SCLC) conduction mechanism. The calculated values of the effective mobility are in agreement with other literature results. For MIS structures, the power-law dependence between current and voltage also indicate a space-charge limited currents based conduction mechanism. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：2096 / 2099
页数：4
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