Optimized growth conditions for the epitaxial nucleation of beta-GaN on GaAs(001) by molecular beam epitaxy

被引：39
|
作者：
Brandt, O
Yang, H
Trampert, A
Wassermeier, M
Ploog, KH
机构：
[1] Paul-Drude-Inst. F. F., D-10117 Berlin
[2] Natl. Res. Ctr. Optoelectron. T., Institute of Semiconductors, Chinese Academy of Science, Beijing 100083
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 04期
关键词：
D O I：
10.1063/1.119583
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ultrathin (5-7 monolayers) nucleation layers of GaN are deposited on (2x4)-GaAs(001) by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction applied in situ reveals these layers to be epitaxial beta-GaN. Transmission electron microscopy confirms this result and reveals in addition that the layers are highly connected and have an atomically abrupt interface to the GaAs substrate. The rms roughness of these layers, as measured by atomic force microscopy, is as low as 1.4 Angstrom. (C) 1997 American Institute of Physics.
引用
收藏
页码：473 / 475
页数：3
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