Study of the Hanle effect with the transverse component of the electron spin orientation in III-V semiconductors

被引：0
|
作者：
Dzhioev, R. I. [1 ]
Aksyanov, I. G. [1 ]
Lazarev, M. V. [1 ]
Ninua, O. A. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
PHYSICS OF THE SOLID STATE | 2006年 / 48卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063783406120055
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The Hanle effect in n-GaAs and p-AlGaAs is studied in the longitudinal and transverse geometries of the experiment, in which the emission is recorded parallel and perpendicular to the spin direction of optically oriented electrons, respectively. The factors responsible for the error in determining the sign of the electron g factor in GaAs studied in the transverse geometry of the experiment are considered. It is shown that the results obtained from measurements of the transverse spin component of the orientation are useful in determining the parameters of semiconductor structures.
引用
收藏
页码：2270 / 2274
页数：5
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