Effect of Reverse Gate Bias on Hot-Carrier Reliability in OCB Trench MOSFET for Solar Cell Applications

被引：0

作者：

Jin, Minghao ^{[1
]}

Fu, Xiao ^{[2
]}

机构：

[1] Univ Salford, Salford M5 4WT, Lancs, England

[2] British Chinese Culture Co Ltd, Manchester, England

来源：

PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON AUTOMATION AND COMPUTING (ICAC 12) | 2012年

关键词：

hot carrier degradation; OCB Trench MOSFET; HCI; TCAD simulation; TRANSISTORS; DEGRADATION; CHANNEL;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

this work describes the hot carrier reliability analysis of a 100V Oxide Charge Balanced (OCB) Trench MOSFET in solar cell applications. Device degradation is studied on the OFF states with a Reverse Gate Bias (RGB) condition. The detail of the properly designed experiment is presented, which identifies distinctive acceleration phenomenon associated to Hot Carrier Injection (HCI). Adopting the TCAD simulation tools, the electrical characteristics of OCB trench MOSFET under reverse gate bias stress condition has been properly-calibrated. The mechanism underlying HCI degradation that affects the OFF state lifespan of an OCB device is explained.

引用

页码：230 / 233

页数：4

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