Effect of Reverse Gate Bias on Hot-Carrier Reliability in OCB Trench MOSFET for Solar Cell Applications

this work describes the hot carrier reliability analysis of a 100V Oxide Charge Balanced (OCB) Trench MOSFET in solar cell applications. Device degradation is studied on the OFF states with a Reverse Gate Bias (RGB) condition. The detail of the properly designed experiment is presented, which identifies distinctive acceleration phenomenon associated to Hot Carrier Injection (HCI). Adopting the TCAD simulation tools, the electrical characteristics of OCB trench MOSFET under reverse gate bias stress condition has been properly-calibrated. The mechanism underlying HCI degradation that affects the OFF state lifespan of an OCB device is explained.