Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs

被引：52
|
作者：
Matsudaira, H [1 ]
Miyamoto, S
Ishizaka, H
Umezawa, H
Kawarada, H
机构：
[1] Waseda Univ, Sch Sci & Engn, Tokyo 1698555, Japan
[2] CREST, Japan Sci & Technol Corp, Tokyo 1020081, Japan
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 07期
关键词：
cutoff frequency; diamond; hydrogen-terminated (H-terminated) surface; metal-insulator-semiconductor field-effect transistors (MISFETs); saturation velocity; submicrometer;
D O I：
10.1109/LED.2004.831200
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Submicrometer-gate (0.2-0.5-mum) diamond metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on an H-terminated diamond surface. The maximum transconductance in dc mode reaches 165 mS/mm, while the average transconductance is 70 mS/mm in submicrometer-gate diamond MISFETs. The highest cutoff frequency of 23 GHz and the maximum frequency of oscillation of 25 GHz are realized in the 0.2-mum-gate diamond MISFET. From the intrinsic transconductances or the cutoff frequencies, the saturation velocities are estimated to be 4 x 10(6) cm/s in the submicrometer-gate FETs. They are reduced by gate-drain capacitance and source resistance.
引用
收藏
页码：480 / 482
页数：3
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