Electronic excitations in quantum wires and dots

被引:1
|
作者
Abstreiter, G
Strenz, R
Schedelbeck, G
Silveira, E
机构
[1] Walter Schottky Institut, Techn. Univ. Munich
来源
PHYSICA B | 1996年 / 227卷 / 1-4期
关键词
inelastic light scattering; electronic excitations; quantized semiconductor structures;
D O I
10.1016/0921-4526(96)00319-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Resonant ineleastic light scattering is used to study collective and single-particle excitations in GaAs/AlGaAs based quantum wires and quantum dots. Interlevel transitions show a significant blue shift with decreasing confinement length. These excitations are dispersionless in dots. In wires both inter- and intrasubband transitions are observed which show the expected broadening and dispersion with increasing in-plane wave vector. The wire structures are tunable by applying a gate voltage. Electronic excitations have been studied in the whole regime From a density modulated 2D electron gas to isolated quantum wires.
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页码:6 / 10
页数:5
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