Effects of Thermal Annealing for Barium and Silicon-added Bismuth Based Zinc Oxide Varistors on Electrical Properties and Grain Boundary Structure

被引：0
|
作者：
Kubota, Atsuko [1 ]
Sato, Yuuki [1 ]
Yoshikado, Shinzo [1 ]
机构：
[1] Doshisha Univ, Grad Sch Sci & Engn, Kyotanabe 6100321, Japan
来源：
ELECTROCERAMICS IN JAPAN XVI | 2014年 / 582卷
关键词：
Bi-based ZnO varistor; low varistor voltage; thermal annealing; electrical properties; grain boundary structure; back scattering electron mode; DEGRADATION;
D O I：
10.4028/www.scientific.net/KEM.582.218
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In order to fabricate varistors with low varistor voltage, the effects of thermal annealing of Co-Mn-Ba-Si-added Bi based ZnO varistors on electrical properties and the grain boundary structure were investigated. The varistor voltage for the Bi-Co-Mn-Ba-Si-added ZnO varistor decreased in half by thermal annealing for a short time. The resistance to electrical degradation was most improved by the addition of SiO2 and thermal annealing for 10-20 min. It is suggested that the composition of Bi and Si in the sheet-like deposit is changed by varying the annealing time and the resistance to electrical degradation is improved by both addition of SiO2 as well as thermal annealing for short time.
引用
收藏
页码：218 / 221
页数：4
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