Thermal stability of IGBT high-frequency operation

被引：23
|
作者：
Sheng, K [1 ]
Finney, SJ [1 ]
Williams, BW [1 ]
机构：
[1] Heriot Watt Univ, Dept Comp & Elect Engn, Edinburgh EH14 4AS, Midlothian, Scotland
来源：
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2000年 / 47卷 / 01期
关键词：
high frequency; insulated gate bipolar transistor; stability; thermal runaway;
D O I：
10.1109/41.824018
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBT's at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits.
引用
收藏
页码：9 / 16
页数：8
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