Thermal stability of IGBT high-frequency operation

被引：23

作者：

Sheng, K ^{[1
]}

Finney, SJ ^{[1
]}

Williams, BW ^{[1
]}

机构：

[1] Heriot Watt Univ, Dept Comp & Elect Engn, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2000年 / 47卷 / 01期

关键词：

high frequency; insulated gate bipolar transistor; stability; thermal runaway;

D O I：

10.1109/41.824018

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBT's at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits.

引用

页码：9 / 16

页数：8

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