Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs

被引：31
|
作者：
Si, Mengwei [1 ]
Conrad, Nathan J. [1 ]
Shin, Sanghoon [1 ]
Gu, Jiangjiang [2 ]
Zhang, Jingyun [1 ]
Alam, Muhammad Ashraful [1 ]
Ye, Peide D. [1 ]
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Sch Elect & Comp Engn, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 11期
关键词：
Ballistic transport; gate-all-around (GAA); InGaAs; low-frequency noise; MOSFET; random telegraph noise (RTN); 1/F NOISE; NANOWIRE MOSFETS; FLUCTUATIONS; TECHNOLOGY; IMPACT;
D O I：
10.1109/TED.2015.2433921
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report the observation of random telegraph noise (RTN) in highly scaled InGaAs gate-all-around (GAA) MOSFETs fabricated by a top-down approach. RTN and low-frequency noise were systematically studied for devices with various gate dielectrics, channel lengths, and nanowire diameters. Mobility fluctuation is identified to be the source of 1/f noise. The 1/f noise was found to decrease as the channel length scaled down from 80 to 20 nm comparing with classical theory, indicating the near-ballistic transport in highly scaled InGaAs GAA MOSFET. Low-frequency noise in ballistic transistors is discussed theoretically.
引用
收藏
页码：3508 / 3515
页数：8
相关论文
共 50 条
  • [21] Modeling 1/f and Lorenzian noise in III-V MOSFETs
    Caruso, E.
    Bettetti, F.
    Del Linz, L.
    Pin, D.
    Segatto, M.
    Palestri, P.
    [J]. 2019 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2019), 2019, : 101 - 104
  • [22] Comparison of low frequency noise in III-V and Si/SiGe HBTs
    Pascal, F
    Jarrix, SG
    Delseny, C
    Chay, C
    Deen, MJ
    Penarier, A
    [J]. NOISE IN DEVICES AND CIRCUITS, 2003, 5113 : 133 - 146
  • [23] Low-Frequency Noise Reduction in Si Nanowire MOSFETs
    Ohmori, K.
    Feng, W.
    Hettiarachchi, R.
    Lee, Y.
    Sato, S.
    Kakushima, K.
    Sato, M.
    Fukuda, K.
    Niwa, M.
    Yamabe, K.
    Shiraishi, K.
    Iwai, H.
    Yamada, K.
    [J]. DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES, 2012, 45 (03): : 437 - 442
  • [24] Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs
    Zhuge, Jing
    Wang, Runsheng
    Huang, Ru
    Tian, Yu
    Zhang, Liangliang
    Kim, Dong-Won
    Park, Donggun
    Wang, Yangyuan
    [J]. IEEE ELECTRON DEVICE LETTERS, 2009, 30 (01) : 57 - 60
  • [25] RANDOM TELEGRAPH NOISE OF DEEP-SUBMICROMETER MOSFETS
    HUNG, KK
    KO, PK
    HU, CM
    CHENG, YC
    [J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) : 90 - 92
  • [26] Low-frequency noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors -: Impact of carbon concentration
    Raoult, Jeremy
    Delseny, Colette
    Pascal, Fabien
    Marin, Mathieu
    Deen, M. Jamal
    [J]. NOISE AND FLUCTUATIONS IN CIRCUITS, DEVICES, AND MATERIALS, 2007, 6600
  • [27] Random telegraph noise in ultimate MOSFETs at very low temperature in the subthreshold regime
    Jehl, X
    Sanquer, M
    Bertrand, G
    Guégan, G
    Deleonibus, S
    [J]. JOURNAL DE PHYSIQUE IV, 2002, 12 (PR3): : 107 - 110
  • [28] RANDOM TELEGRAPH SIGNAL CURRENTS AND LOW-FREQUENCY NOISE IN JUNCTION FIELD-EFFECT TRANSISTORS
    KANDIAH, K
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) : 2006 - 2015
  • [29] Low-frequency suppression of random-telegraph-noise spectra in high-temperature superconductors
    Ashkenazy, V. D.
    Jung, G.
    Khalfin, I. B.
    Shapiro, B. Y.
    [J]. Physical Review B: Condensed Matter, 51 (23):
  • [30] LOW-FREQUENCY SUPPRESSION OF RANDOM-TELEGRAPH-NOISE SPECTRA IN HIGH-TEMPERATURE SUPERCONDUCTORS
    ASHKENAZY, VD
    JUNG, G
    KHALFIN, IB
    SHAPIRO, BY
    [J]. PHYSICAL REVIEW B, 1995, 51 (02): : 1236 - 1244
12345