Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs

被引：31
|
作者：
Si, Mengwei [1 ]
Conrad, Nathan J. [1 ]
Shin, Sanghoon [1 ]
Gu, Jiangjiang [2 ]
Zhang, Jingyun [1 ]
Alam, Muhammad Ashraful [1 ]
Ye, Peide D. [1 ]
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Sch Elect & Comp Engn, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 11期
关键词：
Ballistic transport; gate-all-around (GAA); InGaAs; low-frequency noise; MOSFET; random telegraph noise (RTN); 1/F NOISE; NANOWIRE MOSFETS; FLUCTUATIONS; TECHNOLOGY; IMPACT;
D O I：
10.1109/TED.2015.2433921
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report the observation of random telegraph noise (RTN) in highly scaled InGaAs gate-all-around (GAA) MOSFETs fabricated by a top-down approach. RTN and low-frequency noise were systematically studied for devices with various gate dielectrics, channel lengths, and nanowire diameters. Mobility fluctuation is identified to be the source of 1/f noise. The 1/f noise was found to decrease as the channel length scaled down from 80 to 20 nm comparing with classical theory, indicating the near-ballistic transport in highly scaled InGaAs GAA MOSFET. Low-frequency noise in ballistic transistors is discussed theoretically.
引用
收藏
页码：3508 / 3515
页数：8
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