Analysis of Series Resistance Losses in a-Si:H/c-Si Heterojunction Solar Cells

被引：22

作者：

Gogolin, Ralf ^{[1
]}

Turcu, Mircea ^{[1
]}

Ferre, Rafel ^{[1
]}

Clemens, Juliane ^{[1
]}

Harder, Nils-Peter ^{[1
,2
]}

Brendel, Rolf ^{[1
,3
]}

Schmidt, Jan ^{[1
,3
]}

机构：

[1] Inst Solar Energy Res Hamelin, D-31860 Emmerthal, Germany

[2] SunPower Corp, San Jose, CA 95134 USA

[3] Leibniz Univ Hannover, Dept Solar Energy, Inst Solid State Phys, D-30167 Hannover, Germany

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2014年 / 4卷 / 05期

关键词：

Amorphous silicon; series resistance; silicon heterojunction solar cells; FILMS;

D O I：

10.1109/JPHOTOV.2014.2328575

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We present an experimental method to quantify the series resistance Ra-Si/ITO through the a-Si:H layers and the a-Si:H/ITO interface on test structures. In order to optimize Ra-Si/ITO, we apply different a-Si:H and ITO deposition parameters. We find the best value for R(p)-a-Si/ITO of 0.42 Omega.cm(2) for an ITO double layer with a 10-nm-thin starting layer that provides good contact resistance and an additional 90-nm top layer that provides good conductivity. For R(n)-a-Si/ITO, we reach values below 0.1 Omega.cm(2). We present an analysis of the series resistance and shading losses of our 100-cm(2) bifacial screen-printed a-Si:H/c-Si heterojunction solar cells, which show an open-circuit voltage of V-oc = 733 mV, demonstrating the excellent level of interface passivation. The efficiency of 20.2% is limited by a low short-circuit current density of 37.1 mA/cm(2) and fill factor of 76%.

引用

页码：1169 / 1176

页数：8

共 50 条

[1] Recombination at a-Si:H/c-Si heterointerfaces and in a-Si:H/c-Si heterojunction solar cells
Rau, U
Nguyen, VX
Mattheis, J
Rakhlin, M
Werner, JH
[J]. PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1124 - 1127
[2] Resistive losses at c-Si/a-Si:H/ZnO contacts for heterojunction solar cells
Einsele, Florian
Rostan, Phillip Johannes
Rau, Uwe
[J]. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007, 2007, 989 : 425 - +
[3] Interface defects in a-Si:H/c-Si heterojunction solar cells
Defresne, A.
Plantevin, O.
Sobkowicz, I. P.
Bourcois, J.
Roca i Cabarrocas, P.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2015, 365 : 133 - 136
[4] Technological Advances in A-Si: H/c-Si Heterojunction Solar Cells
Patel, Kamlesh
Tyagi, Pawan K.
[J]. INTERNATIONAL JOURNAL OF RENEWABLE ENERGY RESEARCH, 2014, 4 (02): : 528 - 538
[5] Effects of a-Si:H layer thicknesses on the performance of a-Si:H/c-Si heterojunction solar cells
Fujiwara, Hiroyuki
Kondo, Michio
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)
[6] Recombination and resistive losses at ZnO/a-Si: H/c-Si interfaces in heterojunction back contacts for Si solar cells
Einsele, Florian
Rostan, Philipp J.
Schubert, Markus B.
Rau, Uwe
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)
[7] Optimization of interface properties in a-Si:H/c-Si heterojunction solar cells
Conrad, E.
Maydell, K. v.
Angermann, H.
Schubert, C.
Schmidt, M.
[J]. CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, : 1263 - +
[8] Investigation of a-Si:H/c-Si heterojunction solar cells interface properties
Gudovskikh, AS
Kleider, JP
Froitzheim, A
Fuhs, W
Terukov, EI
[J]. THIN SOLID FILMS, 2004, 451 : 345 - 349
[9] Electrical transport mechanisms in a-Si:H/c-Si heterojunction solar cells
Schulze, T. F.
Korte, L.
Conrad, E.
Schmidt, M.
Rech, B.
[J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (02)
[10] Preparation of (n)a-Si:H/(p)c-Si heterojunction solar cells
Borchert, D
Grabosch, G
Fahrner, WR
[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) : 53 - 59

← 1 2 3 4 5 →