On-Surface Synthesis and Characterization of [7]Triangulene Quantum Ring

被引:76
|
作者
Su, Jie [1 ]
Fan, Wei [1 ]
Mutombo, Pingo [2 ]
Peng, Xinnan [1 ]
Song, Shaotang [1 ]
Ondracek, Martin [2 ]
Golub, Pavlo [3 ]
Brabec, Jiri [3 ]
Veis, Libor [3 ]
Telychko, Mykola [1 ]
Jelinek, Pavel [2 ,4 ]
Wu, Jishan [1 ]
Lu, Jiong [1 ,5 ]
机构
[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[2] Czech Acad Sci, Inst Phys, Prague 16200, Czech Republic
[3] Czech Acad Sci, J Heyrovsky Inst Phys Chem, Vvi, Prague 18223 8, Czech Republic
[4] Palacky Univ, Reg Ctr Adv Technol & Mat, Olomouc 78371, Czech Republic
[5] Natl Univ Singapore, Ctr Adv 2D Mat CA2DM, Singapore 117546, Singapore
关键词
Triangulene quantum ring; antidot engineering; on-surface synthesis; open-shell; scanning probe microscopy; ELECTRONIC-STRUCTURE; GRAPHENE; CYCLOARENES;
D O I
10.1021/acs.nanolett.0c04627
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The ability to engineer geometrically well-defined antidots in large triangulene homologues allows for creating an entire family of triangulene quantum rings (TQRs) with tunable high-spin ground state, crucial for next-generation molecular spintronic devices. Herein, we report the synthesis of an open-shell [7]triangulene quantum ring ([7]TQR) molecule on Au(111) through the surface-assisted cyclodehydrogenation of a rationally designed kekulene derivative. Bond-resolved scanning tunneling microscopy (BR-STM) unambiguously imaged the molecular backbone of a single [7]TQR with a triangular zigzag edge topology, which can be viewed as [7]triangulene decorated with a coronene-like antidot in the center. Additionally, dI/dV mapping reveals that both inner and outer zigzag edges contribute to the edge-localized and spin-polarized electronic states of [7]TQR. Both experimental results and spin-polarized density functional theory calculations indicate that [7]TQR retains its open-shell septuple ground state (S = 3) on Au(111). This work demonstrates a new route for the design of high-spin graphene quantum rings for future quantum devices.
引用
收藏
页码:861 / 867
页数:7
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