Interwell excitons in GaAs superlattices

被引：2
|
作者：
Birkedal, D
ElSayed, K
Sanders, G
Spiegelberg, C
Lyssenko, VG
Stanton, C
Hvam, JM
Timofeev, VB
Bayer, M
机构：
[1] UNIV WURZBURG,D-97074 WURZBURG,GERMANY
[2] UNIV FLORIDA,DEPT PHYS,GAINESVILLE,FL 32611
[3] INST MICROELECT TECHNOL & SUPERPURE MAT,CHERNOGOLOVKA,RUSSIA
[4] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,MOSCOW DISTRICT,RUSSIA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 21卷 / 04期
基金：
俄罗斯科学基金会;
关键词：
GaAs/AlGaAs superlattices; magneto excitons;
D O I：
10.1006/spmi.1996.0208
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The formation of spatially indirect excitons in superlattices with narrow minibands is investigated experimentally. The interwell exciton is similar to the first Wannier-Stark localized exciton of an electrically biased superlattice. However, in the present case the localization is mediated by the Coulomb interaction of the electron and the hole without external fields. (C) 1997 Academic Press Limited.
引用
收藏
页码：587 / 590
页数：4
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