Interwell excitons in GaAs superlattices

被引：11
|
作者：
Birkedal, D
ElSayed, K
Sanders, G
Spiegelberg, C
Lyssenko, VG
Stanton, C
Hvam, JM
Timofeev, VB
Bayer, M
机构：
[1] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,RUSSIA
[2] UNIV WURZBURG,D-97074 WURZBURG,GERMANY
来源：
PHYSICAL REVIEW B | 1996年 / 54卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.54.10316
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The formation of spatially indirect excitons in superlattices with narrow minibands is theoretically and experimentally investigated. We identify the experimental conditions for the observation of interwell excitons and find a distinct excitonic state energetically located between the Is exciton and the onset of the miniband absorption. The interwell exciton is similar to the first Wannier-Stark localized exciton of on electrically biased superlattice. However. in the present case the localization is mediated by the Coulomb interaction of the electron and the hole without external fields.
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收藏
页码：10316 / 10319
页数：4
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