Two-Dimensional Carrier Distribution in Top-Gate Polymer Field-Effect Transistors: Correlation between Width of Density of Localized States and Urbach Energy

被引：156

作者：

Kronemeijer, Auke J. ^{[1
]}

Pecunia, Vincenzo ^{[1
]}

Venkateshvaran, Deepak ^{[1
]}

Nikolka, Mark ^{[1
]}

Sadhanala, Aditya ^{[1
]}

Moriarty, John ^{[1
]}

Szumilo, Monika ^{[1
]}

Sirringhaus, Henning ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

ORGANIC TRANSISTORS; MOBILITY; SEMICONDUCTOR; THICKNESS;

D O I：

10.1002/adma.201303060

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A general semiconductor-independent two-dimensional character of the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temperature-dependent transfer characteristics and the sub-bandgap absorption tails of the polymer semiconductors. A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors.

引用

页码：728 / 733

页数：6

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