Influence of 1x1 defects on Schottky barrier height at the Ag/Si(111)7x7 interface

We examined the influence of 1x1 defects at the Si(111)7x7 surface on the Schottky barrier height (SBH) of the Ag/Si interface. By quenching samples from high temperatures, we intentionally introduced 1x1 defects on Si(111) 7x7 surfaces. After characterizing the area of the 1x1 defects by scanning tunneling microscope, we deposited Ag films in situ at room temperature on the surfaces and measured the SBH. As the 1x1 area increased from 0 to 50 %, SBH increased from 0.60 eV to 0.66 eV. The 1x1 area dependence of the SBH was caused by a locally high SBH in the 1x1 area with the pinch-off area extending around it.