Influence of the voltage contacts on the four-terminal quantized Hall resistance in the nonlinear regime

被引：14
|
作者：
Jeckelmann, B
Jeanneret, B
机构：
[1] Swiss Federal Office of Metrology
来源：
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1997年 / 46卷 / 02期
关键词：
D O I：
10.1109/19.571831
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of the contacts on the value of the quantized Hall resistance has been studied in a series of high-precision measurements, Deviations of the Hall resistance of up to 0.35 mu Omega/Omega from the expected value were observed in a device in which the resistance of one of the voltage contacts used in the measurement was comparable to the Hall resistance. The edge-state theory of contacts gives no satisfactory estimate for the observed deviations.
引用
收藏
页码：276 / 280
页数：5
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